Title :
A 2 W CMOS Hybrid Switching Amplitude Modulator for EDGE Polar Transmitters
Author :
Kwak, Tae-Woo ; Lee, Min-Chul ; Cho, Gyu-Hyeong
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Daejeon
Abstract :
This paper presents a hybrid switching amplitude modulator for class-E2 EDGE polar transmitters. To achieve both high efficiency and high speed, it consists of a wideband buffered linear amplifier as a voltage source and a PWM switching amplifier with a 2 MHz switching frequency as a dependent current source. The linear amplifier with a novel class-AB topology has a high current-driving capability of approximately 300 mA with a bandwidth wider than 10 MHz. It can also operate on four quadrants with very low output impedance of about 200 at the switching frequency attenuating the output ripple voltage to less than 12 . A feedforward path, a PWM control, and a third-order ripple filter are used to reduce the current burden of the linear amplifier. The output voltage of the hybrid modulator ranges from 0.4 to 3 V for a 3.5 V supply. It can drive an RF power amplifier with an equivalent impedance of 4 up to a maximum output power of 2.25 W with a maximum efficiency of 88.3%. The chip has been fabricated in a 0.35 m CMOS process and occupies an area of 4.7 .
Keywords :
3G mobile communication; CMOS integrated circuits; amplitude modulation; transmitters; CMOS hybrid switching amplitude modulator; EDGE polar transmitters; PWM switching amplifier; power 2 W; third-order ripple filter; Amplitude modulation; Broadband amplifiers; Impedance; Power amplifiers; Pulse width modulation; Radiofrequency amplifiers; Switching frequency; Topology; Transmitters; Voltage; Buffer; EDGE; class AB; dc–dc converter; low dropout (LDO); low output impedance; operational amplifier; polar transmitter; power amplifier (PA); pulsewidth modulation (PWM); switching amplifier;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.908769