High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique

Author

Liu, H.C. ; Li, Jianmeng ; Buchanan, M. ; Wasilewski, Zbigniew R.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

32

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

1024

Lastpage

1028

Abstract

We explore the high-frequency capability of quantum-well infrared photodetectors using a microwave-rectification technique. We characterize a variety of devices with barrier thicknesses from 234 to 466 Å and number of wells from 4 to 32. Our packaged detectors have a relatively flat frequency response up to about 30 GHz. These experiments indicate that the intrinsic photoconductive lifetime for these devices in the high-biasing field regime is in the range of 5-6 ps

Keywords

infrared detectors; microwave measurement; photoconducting devices; photodetectors; rectification; semiconductor quantum wells; 234 to 466 A; 30 GHz; 5 to 6 ps; barrier thicknesses; frequency response; high-biasing field regime; high-frequency capability; high-frequency quantum-well infrared photodetectors; intrinsic photoconductive lifetime; microwave-rectification technique; packaged detectors; quantum-well infrared photodetectors; Frequency; Infrared detectors; Microwave devices; Microwave measurements; Microwave theory and techniques; Nonlinear optics; Optical mixing; Photodetectors; Quantum well devices; Quantum wells;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.502380

Filename

502380