Design and measurement of an MQW nipi waveguide modulator for optoelectronic integrated circuits

Author

Koehler, Steffen D. ; Garmire, Elsa M. ; Kost, Alan R. ; Yap, Daniel ; Docter, Daniel P. ; Hasenberg, Thomas C.

Author_Institution

Center for Laser Studies, Univ. of Southern California, Los Angeles, CA, USA

Volume

32

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

1029

Lastpage

1037

Abstract

A procedure for optimizing MQW hetero-nipi waveguide phase modulators is presented that includes both drive voltage and frequency response. Experimental phase change, absorption change, and frequency response measurements of a modulator designed using this algorithm are presented. In a 300-μm-long device consisting of 3 nipi periods, π phase shift is achieved with an applied voltage of 3.25 V with a frequency bandwidth on the order of 200 MHz

Keywords

III-V semiconductors; frequency response; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical design techniques; optical fabrication; optical modulation; optical variables measurement; optical waveguide components; optical waveguides; phase shifters; semiconductor quantum wells; π phase shift; 200 MHz; 3.25 V; 300 mum; InGaAs-GaAs; MQW nipi waveguide modulator; absorption change measurement; algorithm; applied voltage; design; drive voltage; frequency bandwidth; frequency response; frequency response measurements; nipi periods; optoelectronic integrated circuits; phase change measurement; phase modulators; Frequency response; Integrated circuit measurements; Optical waveguides; PIN photodiodes; Phase modulation; Photonic integrated circuits; Quantum well devices; Temperature; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.502381

Filename

502381