DocumentCode :
975459
Title :
New preparation process for sputtered γ-Fe2O3thin film disks
Author :
Ishii, Y. ; Terada, A. ; Ishii, O. ; Ohta, S. ; Hattori, S. ; Makino, K.
Author_Institution :
N.T.T., Tokyo, Japan
Volume :
16
Issue :
5
fYear :
1980
fDate :
9/1/1980 12:00:00 AM
Firstpage :
1114
Lastpage :
1116
Abstract :
A new preparation process for sputtered γ-Fe2O3thin film disks has been developed. The new process is composed of Fe3O4film formation by reactive sputtering and oxidation to γ-Fe2O3film. The characteristic of the process is that the Fe3O4single phase film is formed directly by reactive sputtering of an Fe-alloy target in Ar-O2atmosphere. The magnetic properties and recording results of the newly developed γ-Fe2O3thin films were almost equal to those of the reported sputtered films. Recording density D50reached 1,100 bits/mm.
Keywords :
Magnetic disk recording; Sputtering; Coercive force; Disk recording; Electrodes; Electrons; Laboratories; Magnetic films; Magnetic properties; Magnetic recording; Oxidation; Sputtering;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1980.1060660
Filename :
1060660
Link To Document :
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