• DocumentCode
    975474
  • Title

    New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regions

  • Author

    Capasso, F.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    18
  • Issue
    1
  • fYear
    1982
  • Firstpage
    12
  • Lastpage
    13
  • Abstract
    A new low-excess-noise avalanche detector is proposed. In this structure electrons and holes are spatially separated and impact ionise in regions of different bandgap. The ionisation rates ratio can thus be made extremely high (¿/ß¿100) by suitably choosing the bandgap difference, so that the device mimics a photomultiplier. This new concept is applicable to most III-V lattice-matched heterojunctions, including long-wavelength materials.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; photodetectors; AlGaAs-GaAs; III-V lattice-matched heterojunctions; avalanche detector; bandgap; electron avalanche region; hole avalanche regions; impact ionisation; ionisation rates ratio; long-wavelength materials; semiconductors; ultra-low-noise avalanche photodiode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820009
  • Filename
    4246183
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975474