Title :
Steady state characterization of an optically controlled p-i-n diode for low frequency switching under front/back illumination
Author :
Schwartzenberg, John W. ; Nwankpa, Chika O. ; Fischl, Robert ; Rosen, Arye ; Gilbert, Dean B. ; Richardson, David
Author_Institution :
Drexel Univ., Philadelphia, PA, USA
fDate :
7/1/1996 12:00:00 AM
Abstract :
This paper describes the determination of the steady state operating characteristics of an optically controlled Si p-i-n illuminated from either top or bottom for varying electrode spacings and conducting layer thicknesses. Optically controlled p-i-n diodes have previously been used in both microwave and pulsed power applications and are now being considered for use in high-power, low-frequency (60 Hz) switching such as Static Var Compensators
Keywords :
p-i-n photodiodes; power semiconductor diodes; power semiconductor switches; semiconductor plasma; static VAr compensators; 60 Hz; Si; conducting layer thicknesses; electrode spacings; front/back illumination; high-power switching; low frequency switching; optically controlled p-i-n diode; static VAr compensators; steady state operating characteristics; Electrodes; Frequency; High speed optical techniques; Ion implantation; Lighting; Optical control; Optical pulses; P-i-n diodes; Plasma measurements; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
