Title :
Monte Carlo analysis of sensitivity of threshold voltage in small geometry MOSFETs
Author :
Alvarez, A.R. ; Akers, L.A.
Author_Institution :
Motorola, Mesa, USA
Abstract :
A Monte Carlo technique is used to investigate the effects of process variations on the threshold voltage of a small geometry MOSFET. Results indicate that by controlling the variation of process parameters to ±10%, the threshold voltage variation is limited to ± 110 mV at 0.739 V (15%).
Keywords :
Monte Carlo methods; insulated gate field effect transistors; semiconductor device models; Monte Carlo analysis; effects of process variations; semiconductor device models; sensitivity; small geometry MOSFET; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820030
