• DocumentCode
    975697
  • Title

    Monte Carlo analysis of sensitivity of threshold voltage in small geometry MOSFETs

  • Author

    Alvarez, A.R. ; Akers, L.A.

  • Author_Institution
    Motorola, Mesa, USA
  • Volume
    18
  • Issue
    1
  • fYear
    1982
  • Firstpage
    42
  • Lastpage
    43
  • Abstract
    A Monte Carlo technique is used to investigate the effects of process variations on the threshold voltage of a small geometry MOSFET. Results indicate that by controlling the variation of process parameters to ±10%, the threshold voltage variation is limited to ± 110 mV at 0.739 V (15%).
  • Keywords
    Monte Carlo methods; insulated gate field effect transistors; semiconductor device models; Monte Carlo analysis; effects of process variations; semiconductor device models; sensitivity; small geometry MOSFET; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820030
  • Filename
    4246204
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975697