DocumentCode
975756
Title
Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinement
Author
Brendel, R. ; Hirsch, M. ; Plieninger, R. ; Werner, J.H.
Author_Institution
Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany
Volume
43
Issue
7
fYear
1996
fDate
7/1/1996 12:00:00 AM
Firstpage
1104
Lastpage
1113
Abstract
Thin-layer silicon solar cells utilize surface textures to increase light absorption and back surface fields to prevent recombination at the silicon-substrate interface. We present an analytical model for the internal quantum efficiency that accounts for light trapping and also considers carrier generation and recombination in back surface fields or substrates. We introduce a graphical representation of experimental data, the so-called Parameter-Confidence-Plot, which allows one to draw maximum information on diffusion lengths and surface recombination velocities from quantum efficiency measurements. The analysis is exemplified for state of the art thin-layer silicon solar cells with and without back surface fields
Keywords
carrier lifetime; elemental semiconductors; semiconductor device models; silicon; solar cells; surface recombination; surface texture; 1D model; Si; analytical model; back surface fields; carrier generation; diffusion lengths; graphical representation; internal quantum efficiency; light absorption; light trapping; optical confinement; parameter-confidence-plot; quantum efficiency analysis; surface recombination velocities; surface textures; thin-layer Si solar cells; Analytical models; Length measurement; Optical surface waves; Photovoltaic cells; Radiative recombination; Silicon; Solar power generation; Space charge; Substrates; Surface texture;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.502422
Filename
502422
Link To Document