DocumentCode :
975756
Title :
Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinement
Author :
Brendel, R. ; Hirsch, M. ; Plieninger, R. ; Werner, J.H.
Author_Institution :
Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany
Volume :
43
Issue :
7
fYear :
1996
fDate :
7/1/1996 12:00:00 AM
Firstpage :
1104
Lastpage :
1113
Abstract :
Thin-layer silicon solar cells utilize surface textures to increase light absorption and back surface fields to prevent recombination at the silicon-substrate interface. We present an analytical model for the internal quantum efficiency that accounts for light trapping and also considers carrier generation and recombination in back surface fields or substrates. We introduce a graphical representation of experimental data, the so-called Parameter-Confidence-Plot, which allows one to draw maximum information on diffusion lengths and surface recombination velocities from quantum efficiency measurements. The analysis is exemplified for state of the art thin-layer silicon solar cells with and without back surface fields
Keywords :
carrier lifetime; elemental semiconductors; semiconductor device models; silicon; solar cells; surface recombination; surface texture; 1D model; Si; analytical model; back surface fields; carrier generation; diffusion lengths; graphical representation; internal quantum efficiency; light absorption; light trapping; optical confinement; parameter-confidence-plot; quantum efficiency analysis; surface recombination velocities; surface textures; thin-layer Si solar cells; Analytical models; Length measurement; Optical surface waves; Photovoltaic cells; Radiative recombination; Silicon; Solar power generation; Space charge; Substrates; Surface texture;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.502422
Filename :
502422
Link To Document :
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