• DocumentCode
    975987
  • Title

    Tunnelling through GaAs-AlxGa1¿xAs-GaAs double heterojunctions

  • Author

    Delagebeaudeuf, D. ; Delescluse, P. ; Etienne, P. ; Massies, J. ; Laviron, M. ; Chaplart, J. ; Linh, T.

  • Author_Institution
    Thomson-CSF, Central Research Laboratory, Orsay, France
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • Firstpage
    85
  • Lastpage
    87
  • Abstract
    GaAs-Al0.5Ga0.5As-GaAs tunnel diodes have been achieved. Tunnel currents have been measured and compared to theoretical calculations based on WKB approximation.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; tunnel diodes; tunnelling; GaAs-Al0.5Ga0.5As-GaAs tunnel diodes; GaAs-AlxGa1-xAs-GaAs double heterojunctions; III-V semiconductors; Wentzel-Kramer-Brillouin approximation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820059
  • Filename
    4246234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975987