DocumentCode
976448
Title
Microwave phase retardation in saturated InGaAs photodetectors
Author
Currie, Marc ; Vurgaftman, Igor
Author_Institution
Opt. Sci. Div., Naval Res. Lab., Washington, DC
Volume
18
Issue
13
fYear
2006
fDate
7/1/2006 12:00:00 AM
Firstpage
1433
Lastpage
1435
Abstract
Under high optical fluence, the time-domain saturation of photodetectors is observed by a broadened peak as well as an increase in fall time. As the intensity of an optical pulse train of 2-ps pulses at 1 GHz is increased, an InGaAs p-i-n photodetector moves from an unsaturated to a saturated regime. The resulting electrical pulse´s centroid moves later in time as the optical fluence is increased. This pulse centroid motion during photodetector saturation fits a linear shift in the detected phase of the microwave oscillator impressed upon the optical carrier producing an amplitude-to-phase converter
Keywords
III-V semiconductors; gallium arsenide; indium compounds; microwave oscillators; microwave photonics; p-i-n photodiodes; photodetectors; 1 GHz; 2 ps; InGaAs; InGaAs photodetectors; amplitude-to-phase converter; electrical pulse centroid; microwave oscillator; microwave retardation; optical carrier; optical fluence; optical pulse train; p-i-n photodetector; phase retardation; saturated photodetectors; time-domain saturation; unsaturated regime; Dynamic range; Indium gallium arsenide; Nonlinear optics; Optical pulses; Optical saturation; Optical waveguides; Photodetectors; Photodiodes; Pulse amplifiers; Time domain analysis; High-power photodetectors; photodetectors; photodiodes; saturation current;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2006.877552
Filename
1643247
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