Title :
A comprehensive model for photomixing in ultrafast photoconductors
Author :
Saeedkia, Daryoosh ; Safavi-Naeini, Safieddin
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.
fDate :
7/1/2006 12:00:00 AM
Abstract :
A comprehensive model for photomixing phenomenon in a dc-biased ultrafast photoconductor is proposed. The dependence of the carrier lifetime and carrier velocity on the electric field is taken into account, and the significance of carrier transport and carrier generation and recombination mechanisms in a terahertz photomixer are evaluated. A method for calculating the nonuniform induced electric field due to excess charge density resulting from unequal electron and hole recombination lifetimes is presented
Keywords :
carrier lifetime; electron-hole recombination; high-speed optical techniques; microwave photonics; photoconducting devices; submillimetre wave mixers; carrier lifetime; carrier velocity; charge density; photomixing; recombination; ultrafast photoconductors; Charge carrier lifetime; Charge carrier processes; Electron optics; Nonlinear optics; Nonuniform electric fields; Optical materials; Photoconducting materials; Photoconductivity; Spontaneous emission; Ultrafast optics; Continuous-wave terahertz sources; photomixing; terahertz photomixers; ultrafast photoconductors;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.877575
