A comprehensive model for photomixing in ultrafast photoconductors

Author

Saeedkia, Daryoosh ; Safavi-Naeini, Safieddin

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.

Volume

18

Issue

13

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

1457

Lastpage

1459

Abstract

A comprehensive model for photomixing phenomenon in a dc-biased ultrafast photoconductor is proposed. The dependence of the carrier lifetime and carrier velocity on the electric field is taken into account, and the significance of carrier transport and carrier generation and recombination mechanisms in a terahertz photomixer are evaluated. A method for calculating the nonuniform induced electric field due to excess charge density resulting from unequal electron and hole recombination lifetimes is presented

Keywords

carrier lifetime; electron-hole recombination; high-speed optical techniques; microwave photonics; photoconducting devices; submillimetre wave mixers; carrier lifetime; carrier velocity; charge density; photomixing; recombination; ultrafast photoconductors; Charge carrier lifetime; Charge carrier processes; Electron optics; Nonlinear optics; Nonuniform electric fields; Optical materials; Photoconducting materials; Photoconductivity; Spontaneous emission; Ultrafast optics; Continuous-wave terahertz sources; photomixing; terahertz photomixers; ultrafast photoconductors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.877575

Filename

1643255