DocumentCode
976590
Title
High-efficiency millimetre-wave InP TEOs made by liquid phase epitaxy
Author
Yen, K.H. ; Berenz, J.J.
Author_Institution
TRW Defense & Space Systems, Redondo Beach, USA
Volume
18
Issue
4
fYear
1982
Firstpage
171
Lastpage
172
Abstract
High-efficiency millimetre-wave InP TEOs have been made using epitaxial material grown by liquid phase epitaxy. 417 mW has been achieved at 34 GHz with 7.6% efficiency.
Keywords
Gunn oscillators; III-V semiconductors; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 34 GHz; Gunn oscillator; InP; high efficiency MM wave TEO; liquid phase epitaxy; microwave oscillator; semiconductor; transferred electron oscillator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820118
Filename
4246295
Link To Document