DocumentCode
976713
Title
A sub- and near-threshold current model for silicon MESFETs
Author
Marshall, John D. ; Meindl, James D.
Author_Institution
Stanford Univ., CA, USA
Volume
35
Issue
3
fYear
1988
fDate
3/1/1988 12:00:00 AM
Firstpage
388
Lastpage
390
Abstract
An analytical model for silicon MESFETs that predicts static current-voltage characteristics continuously from subthreshold through above-threshold operation has been developed. The model is based on an expression for the channel charge density derived from an analytical solution of Poisson´s equation in one dimension including mobile electrons and holes. The closed-form current model is verified with measured data in all regimes of operation
Keywords
Schottky gate field effect transistors; elemental semiconductors; semiconductor device models; silicon; 1D solution; MESFETs; Poisson´s equation; Si; analytical model; channel charge density; closed-form current model; mobile electrons; mobile holes; near-threshold current model; static current-voltage characteristics; subthreshold; Analytical models; Charge carrier processes; Current-voltage characteristics; Digital circuits; Doping profiles; Electron mobility; Logic gates; MESFETs; Poisson equations; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2467
Filename
2467
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