Title :
Circular beam, high power operation of 0.98 μm InGaAs/InGaAsP lasers with a tapered waveguide spot-size expander
Author :
Shinoda, K. ; Hiramoto, K. ; Sagawa, M. ; Toyonaka, T. ; Uomi, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fDate :
6/6/1996 12:00:00 AM
Abstract :
A 0.98 μm InGaAs/InGaAsP strained quantum well laser with a laterally tapered waveguide spot-size expander is demonstrated to achieve highly reliable and stable lateral mode operation. This laser, which has a 0.8 μm wide ridge-neck at the facet, showed a linear L-I curve up to 340 mW, with circular and narrow beam divergence of 10°×15°
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser modes; quantum well lasers; waveguide lasers; 0.98 micron; 340 mW; InGaAs-InGaAsP; circular beam; high power operation; lateral mode; ridge neck; strained quantum well laser; tapered waveguide spot-size expander;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960756
