Title :
Optimisation of implantation conditions for the formation of buried SiO2 layers in silicon
Author :
Mossadeq, H. ; Bennett, R.J. ; Anand, K.V.
Author_Institution :
University of Kent at Canterbury, Electronics Laboratories, Canterbury, UK
Abstract :
The substrate temperature dependence of the IR transmission spectra of buried silicon dioxide layers formed by high dose ion implantation (~1017) was investigated for an ion dose ranging from 1017 to 1018 ions/cm2 at 250°C of 16O+ at 100 keV energy. The IR spectra indicate that the silicon/silicon-dioxide/silicon can be obtained after thermal annealing treatment of the implanted sample for 10 mm in hydrogen ambient at 1100°C.
Keywords :
annealing; elemental semiconductors; infrared spectra of inorganic solids; ion implantation; semiconductor doping; silicon; silicon compounds; IR transmission spectra; LSI; O16+; Si; Si-SiO2-Si; buried SiO2 layers; elemental semiconductors; ion dose; ion implantation; optimisation; substrate temperature dependence; thermal annealing treatment;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820147
