Nonlinear effects in T-branch junctions

Author

Mateos, Javier ; Vasallo, Beatriz G. ; Pardo, Daniel ; González, Tomás ; Pichonat, Emmanuelle ; Galloo, Jean-Sébastien ; Bollaert, Sylvain ; Roelens, Yannick ; Cappy, Alain

Author_Institution

Dept. de Fisica Aplicada, Univ. de Salamanca, Spain

Volume

25

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

235

Lastpage

237

Abstract

The negative potential appearing at the central branch of T-branch junctions (TBJs) when biasing left and right contacts in push-pull fashion has been found to appear under high biasing not only for short (ballistic) TBJs but also for long (diffusive) ones. By means of a microscopic Monte Carlo simulation we are able to explain this nonlinear effect as a consequence of intervalley scattering mechanisms leading to the emergence of an accumulation domain that modifies the electronic potential profile within the devices.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; ballistic transport; gallium arsenide; indium compounds; semiconductor diodes; AlInAs; InGaAs; Monte Carlo simulation; T-branch junctions; accumulation domain; ballistic devices; biasing; electronic potential profile; intervalley scattering mechanisms; negative potential; nonlinear effect; three-terminal ballistic junctions; Ballistic transport; Electron microscopy; Fabrication; Molecular beam epitaxial growth; Monte Carlo methods; Nanoscale devices; Scanning electron microscopy; Scattering; Semiconductor process modeling; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.826571

Filename

1295092