Title :
Nonlinear effects in T-branch junctions
Author :
Mateos, Javier ; Vasallo, Beatriz G. ; Pardo, Daniel ; González, Tomás ; Pichonat, Emmanuelle ; Galloo, Jean-Sébastien ; Bollaert, Sylvain ; Roelens, Yannick ; Cappy, Alain
Author_Institution :
Dept. de Fisica Aplicada, Univ. de Salamanca, Spain
fDate :
5/1/2004 12:00:00 AM
Abstract :
The negative potential appearing at the central branch of T-branch junctions (TBJs) when biasing left and right contacts in push-pull fashion has been found to appear under high biasing not only for short (ballistic) TBJs but also for long (diffusive) ones. By means of a microscopic Monte Carlo simulation we are able to explain this nonlinear effect as a consequence of intervalley scattering mechanisms leading to the emergence of an accumulation domain that modifies the electronic potential profile within the devices.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; ballistic transport; gallium arsenide; indium compounds; semiconductor diodes; AlInAs; InGaAs; Monte Carlo simulation; T-branch junctions; accumulation domain; ballistic devices; biasing; electronic potential profile; intervalley scattering mechanisms; negative potential; nonlinear effect; three-terminal ballistic junctions; Ballistic transport; Electron microscopy; Fabrication; Molecular beam epitaxial growth; Monte Carlo methods; Nanoscale devices; Scanning electron microscopy; Scattering; Semiconductor process modeling; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.826571
