Annealing phenomena in ion implanted bubble circuits

The effects of annealing in air on the static and propagation properties of implanted bubble garnet films have been investigated at temperatures up to 600°C. Regular implanted profiles with thicknesses in the range of 0.5 to 0.6 μm have been created by using H+ or He + Ne ions. The capping layer effect responsible for the increase in the bubble collapse field rises monotonically with temperature. X rays and ferromagnetic resonance measurements show a regular decrease of lattice parameter change and stress induced anisotropy with increasing temperatures. The loss of propagation appears to occur when the stress induced anisotropy is no longer sufficient to force the magnetization to lie in the plane of the film.