Title :
Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode
Author :
Neuburger, M. ; Allgaier, J. ; Zimmermann, T. ; Daumiller, I. ; Kunze, M. ; Birkhahn, R. ; Gotthold, D.W. ; Kohn, E.
Author_Institution :
Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany
fDate :
5/1/2004 12:00:00 AM
Abstract :
Passivated AlGaN-GaN high electron mobility transistor (HEMT) structures are modified by adding a MOS test gate placed between gate and drain to identify surface charge phenomena by stress experiments. A new method is described to identify the vertical position of the charge centroid of charge injected from the gate. In the case investigated, this is within the passivation layer.
Keywords :
III-V semiconductors; aluminium compounds; electrodes; gallium compounds; high electron mobility transistors; integrated circuit testing; nitrogen compounds; passivation; surface charging; AlGaN-GaN; SiN; charge centroid; drain; field effect transistor; gate; high electron mobility transistor; passivation; surface charging effects; test electrode; Dielectrics; Electrodes; FETs; HEMTs; MESFETs; MISFETs; Passivation; Surface charging; Surface resistance; Testing;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.827283
