DocumentCode
977083
Title
Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode
Author
Neuburger, M. ; Allgaier, J. ; Zimmermann, T. ; Daumiller, I. ; Kunze, M. ; Birkhahn, R. ; Gotthold, D.W. ; Kohn, E.
Author_Institution
Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany
Volume
25
Issue
5
fYear
2004
fDate
5/1/2004 12:00:00 AM
Firstpage
256
Lastpage
258
Abstract
Passivated AlGaN-GaN high electron mobility transistor (HEMT) structures are modified by adding a MOS test gate placed between gate and drain to identify surface charge phenomena by stress experiments. A new method is described to identify the vertical position of the charge centroid of charge injected from the gate. In the case investigated, this is within the passivation layer.
Keywords
III-V semiconductors; aluminium compounds; electrodes; gallium compounds; high electron mobility transistors; integrated circuit testing; nitrogen compounds; passivation; surface charging; AlGaN-GaN; SiN; charge centroid; drain; field effect transistor; gate; high electron mobility transistor; passivation; surface charging effects; test electrode; Dielectrics; Electrodes; FETs; HEMTs; MESFETs; MISFETs; Passivation; Surface charging; Surface resistance; Testing;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2004.827283
Filename
1295099
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