Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP

Author

Schramm, C. ; Schlaak, W. ; Mekonnen, G.G. ; Passenberg, W. ; Umbach, A. ; Seeger, A. ; Wolfram, P. ; Bach, H.-G.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

Volume

32

Issue

12

fYear

1996

fDate

6/6/1996 12:00:00 AM

Firstpage

1139

Lastpage

1141

Abstract

The successful fabrication of AlInAs/GaInAs HEMTs, regrown by MBE on patterned optical waveguide surfaces after the local removal of a previously grown photodiode layer stack, is reported. The devices are part of a distributed amplifier within an integrated optoelectronic receiver intended to operate at a 1.55 μm wavelength and at bit rates of 20 and/or 40 Gbit/s. The performance of the HEMTs is highly comparable to reference devices grown on planar surfaces

Keywords

III-V semiconductors; aluminium compounds; distributed amplifiers; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical receivers; semiconductor epitaxial layers; semiconductor growth; 1.55 micrometre; 20 Gbit/s; 40 Gbit/s; AlInAs-GaInAs; InP; MBE; bit rates; distributed amplifier; integrated optoelectronic receiver; patterned optical waveguide surfaces; reference devices; waveguide integrated HEMTs;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19960730

Filename

502904