Title :
Silicon carbide on insulator formation using the Smart Cut process
Author :
Di Cioccio, L. ; Le Tiec, Y. ; Letertre, F. ; Jaussaud, C. ; Bruel, M.
Author_Institution :
Departement de Microtechnol., LETI-CEA, Grenoble, France
fDate :
6/6/1996 12:00:00 AM
Abstract :
The Smart Cut process has been applied for the first time to SiC, in order to form silicon carbide on insulator (SiCOI) structures. These structures have been formed on polycrystalline SiC and on silicon substrates
Keywords :
annealing; integrated circuit technology; ion implantation; polishing; silicon compounds; wafer bonding; Si; Si substrate; SiC; SiC on insulator formation; SiCOI structures; Smart Cut process; polycrystalline SiC substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960717
