DocumentCode
977513
Title
InGaAsP/InP dual-wavelength BH laser array
Author
Nagai, H. ; Suzuki, Y. ; Noguchi, Y.
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
18
Issue
9
fYear
1982
Firstpage
371
Lastpage
372
Abstract
A dual-wavelength BH laser array emitting at 1.26 and 1.55 ¿m has been fabricated. Spacing between the two BH lasers is 30 ¿m, and simultaneous CW operation of the two lasers at room temperature has been achieved. Measured crosstalk was ¿50 dB.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.26 micron wavelength; 1.55 micron wavelength; CW operation; InGaAsP-InP buried heterostructure laser; crosstalk; dual-wavelength BH laser array; semiconductor laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820254
Filename
4246387
Link To Document