• DocumentCode
    977517
  • Title

    Memory applications of Nb-Nb2O5-Pb(In) tunnel junctions

  • Author

    Villegier, J.C. ; Matheron, G. ; Coeure, P.

  • Author_Institution
    L.E.T.I., Commissariat a L´´energie Atomique, Grenoble France
  • Volume
    16
  • Issue
    5
  • fYear
    1980
  • fDate
    9/1/1980 12:00:00 AM
  • Firstpage
    1230
  • Lastpage
    1232
  • Abstract
    This paper describes the fabrication and testing of a two-junction Josephson device which can be used as a DRO memory cell for the investigation of the feasability of a random access memory. The cell was fabricated by means of a 10-layers thin film process with Nb-Nb2O5-Pb(In) tunnel junctions. Quasi-static and dynamic experiments have been performed on these devices and compared to computer simulations. The agreement seems to be fairly good. Memory capability has been proven by successive write and destructive read out cycles in the quasi-static mode (up to 10 MHz). Very high speed transitions from superconductive to normal state initiated by current pulses in the control line have been observed to the limit (25 ps) of the test apparatus.
  • Keywords
    DRO memories; Josephson device memories; Electrodes; Equivalent circuits; Fabrication; Insulation; Josephson junctions; Mechanical factors; Niobium; Random access memory; Surface contamination; Testing;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1980.1060858
  • Filename
    1060858
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977517