GaInAs/GaInAsP strained quantum well monolithic electroabsorption modulator/amplifier by lateral bandgap control with nonplanar substrates

Author

Koyama, Fumio ; Liou, K.-Y. ; Dentai, A.G. ; Raybon, G. ; Burrus, C.A.

Author_Institution

Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA

Volume

29

Issue

24

fYear

1993

Firstpage

2104

Lastpage

2106

Abstract

An electroabsorption modulator and an optical amplifier have been monolithically integrated by using nonplanar MOVPE. A bandgap shift of more than 60nm was obtained with atmospheric pressure MOVPE of GaInAs/GaInAsP strained QWs on 10 mu m wide ridges. A chip gain of 9dB and an excitation ratio of 17dB were obtained for the monolithic electroabsorption modulator/amplifier. The integration of an optical amplifier enables the use of a wavelength close to the bandgap of the modulator, resulting in low voltage and low chirp operation.

Keywords

III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical modulation; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 10 micron; 9 dB; GaInAs-GaInAsP; GaInAs/GaInAsP strained QWs; GaInAs/GaInAsP strained quantum well monolithic electroabsorption modulator/amplifier; atmospheric pressure MOVPE; bandgap shift; chip gain; excitation ratio; lateral bandgap control; low chirp operation; low voltage; monolithic integration; nonplanar MOVPE; nonplanar substrates; optical amplifier;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19931407

Filename

247598