• DocumentCode
    977892
  • Title

    Velocity/field characteristic measurement using a high-frequency modulated solid-state laser diode

  • Author

    Evanno, M.H. ; Vaterkowski, J.L.

  • Author_Institution
    Université des Sciences et Techniques de Lille I, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d´´Ascq, France
  • Volume
    18
  • Issue
    10
  • fYear
    1982
  • Firstpage
    417
  • Lastpage
    418
  • Abstract
    A new experimental method to determine a velocity/field characteristic in semiconductor material is reported. This is a time-of-flight technique based on the phase-shift measurement between the photocurrent created by the output modulated light beam of a laser solid-state diode and the high-frequency signal which modulates the laser. First results concerning hole velocity in silicon and electron velocity in gallium arsenide are presented.
  • Keywords
    III-V semiconductors; carrier mobility; elemental semiconductors; gallium arsenide; microwave measurement; silicon; GaAs; HF modulated solid-state laser diode; III-V semiconductor; Si; drift velocity; electron holes; electron mobility; elemental semiconductor; microwave measurement; output modulated light beam; phase-shift measurement; photocurrent; time-of-flight technique; velocity/field characteristic measurement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820286
  • Filename
    4246420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=977892