• DocumentCode
    977959
  • Title

    10 Gbit/s DFB laser/monitor PICs for low cost high speed laser modules

  • Author

    Dutting, K. ; Idler, W.

  • Author_Institution
    Optoelectron. Div., Alcatel SEL AG, Stuttgart, Germany
  • Volume
    29
  • Issue
    24
  • fYear
    1993
  • Firstpage
    2145
  • Lastpage
    2146
  • Abstract
    Direct modulation with 10 Gbit/s and 1:10 extinction ratio with low chirp of 0.3nm is achieved with a 1.5 mu m InGaAsP-InP MQW DFB laser/monitor diode photonic integrated circuit (PIC). Uniform laser mirrors and monitor diode facets are reactive ion etched using a CH4/H2/CO2 gas mixture.
  • Keywords
    III-V semiconductors; digital communication systems; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser transitions; optical communication equipment; optical modulation; photodiodes; semiconductor lasers; 1.5 micron; 10 Gbit/s; CH 4/H 2/CO 2 gas mixture; InGaAsP-InP; InGaAsP/InP laser/monitor diode; MQW DFB laser; OEIC; direct modulation; high speed laser modules; low cost modules; monitor diode facets; photonic integrated circuit; reactive ion etch; uniform laser mirrors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931434
  • Filename
    247624