DocumentCode
977959
Title
10 Gbit/s DFB laser/monitor PICs for low cost high speed laser modules
Author
Dutting, K. ; Idler, W.
Author_Institution
Optoelectron. Div., Alcatel SEL AG, Stuttgart, Germany
Volume
29
Issue
24
fYear
1993
Firstpage
2145
Lastpage
2146
Abstract
Direct modulation with 10 Gbit/s and 1:10 extinction ratio with low chirp of 0.3nm is achieved with a 1.5 mu m InGaAsP-InP MQW DFB laser/monitor diode photonic integrated circuit (PIC). Uniform laser mirrors and monitor diode facets are reactive ion etched using a CH4/H2/CO2 gas mixture.
Keywords
III-V semiconductors; digital communication systems; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser transitions; optical communication equipment; optical modulation; photodiodes; semiconductor lasers; 1.5 micron; 10 Gbit/s; CH 4/H 2/CO 2 gas mixture; InGaAsP-InP; InGaAsP/InP laser/monitor diode; MQW DFB laser; OEIC; direct modulation; high speed laser modules; low cost modules; monitor diode facets; photonic integrated circuit; reactive ion etch; uniform laser mirrors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931434
Filename
247624
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