• DocumentCode
    978155
  • Title

    The Effect of an Yttrium Interlayer on a Ni Germanided Metal Gate Workfunction in SiO2/HfO2

  • Author

    Yu, H.P. ; Pey, K.L. ; Choi, W.K. ; Dawood, M.K. ; Chew, H.G. ; Antoniadis, D.A. ; Fitzgerald, E.A. ; Chi, D.Z.

  • Author_Institution
    Singapore-MIT Alliance, Singapore
  • Volume
    28
  • Issue
    12
  • fYear
    2007
  • Firstpage
    1098
  • Lastpage
    1101
  • Abstract
    In this letter, the tuning of a nickel fully germanided metal gate effective workfunction via a hyperthin yttrium (Y) interlayer at the bottom of the metal electrode was demonstrated on both SiO2 and HfO2. By varying the Y interlayer thickness from 0 to 9.6 nm, a full range of workfunction tuning from 5.11 to 3.65 eV has been achieved on NiGeY/SiO2 stacks. It was also found that the chemical potential of the material that is adjacent to the gate electrode/gate insulator plays an important role in the determination of the effective workfunction. This work-function tuning window was observed to decrease to a range of 5.08-4.25 eV on NiGeY/HfO2 stacks.
  • Keywords
    MOSFET; germanium compounds; hafnium compounds; high-k dielectric thin films; metallisation; nickel compounds; semiconductor-insulator-semiconductor devices; silicon compounds; work function; NiGeY-SiO2-HfO2 - Interface; effective workfunction; electron volt energy 3.65 eV to 5.11 eV; gate electrode/gate insulator; material chemical potential; metal gate workfunction; size 0 nm to 9.6 nm; workfunction tuning; CMOS technology; Chemicals; Dielectric materials; Electrodes; Hafnium oxide; Inorganic materials; MOSFET circuits; Nickel; Student members; Yttrium; High-$kappa$; Ni germanide (NiGe); metal gate; workfunction tuning;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2007.909999
  • Filename
    4383550
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978155