Optimisation of 10 Gbit/s InGaAsP electroabsorption modulator operating at high temperature

Author

Foti, E. ; Fratta, L. ; Ghiglieno, F. ; Coriasso, C. ; Cacciatore, C. ; Rigo, C. ; Agresti, M. ; Vallone, M. ; Codato, S. ; Fornuto, G. ; Fang, R. ; Rosso, M. ; Buccieri, A. ; Valenti, P.

Author_Institution

Turin Technol. Center, Torino, Italy

Volume

151

Issue

2

fYear

2004

fDate

4/26/2004 12:00:00 AM

Firstpage

103

Lastpage

108

Abstract

The authors present the development of an electroabsorption modulator (EAM) based on the quantum confined Stark effect in InGaAsP strained multiple quantum wells (MQWs), suitable for 40-80 km propagation of 10 Gbit/s optical signals on standard single-mode fibre at 1.55 μm. A microscopic model has been developed to calculate the EAM optical properties as a function of the electric field and temperature, starting from the composition and thickness of the strained MQW layers. An MQW structure has been designed and fabricated to obtain high extinction ratio, low insertion loss and negative chirp at 1.55 μm and 60°C. Experimental results on discrete EAMs are reported and compared with the model. The devices demonstrate a contrast ratio of >10 dB, an insertion loss of 5 dB and a negative chirp at 10 Gbit/s, 60°C, with a 2 V voltage swing.

Keywords

III-V semiconductors; Stark effect; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical communication equipment; optical fabrication; optical fibre communication; optical losses; optimisation; semiconductor quantum wells; 1.55 mum; 10 Gbit/s; 10 Gbit/s InGaAsP electroabsorption modulator; 10 Gbit/s optical signals; 2 V voltage swing; 40 to 80 km; 40-80 km propagation; 5 dB; 60 degC; EAM optical properties; InGaAsP; InGaAsP strained multiple quantum wells; high extinction ratio; high temperature operation; insertion loss; microscopic model; negative chirp; quantum confined Stark effect; standard single-mode fibre; strained MQW layers;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20040288

Filename

1295760