• DocumentCode
    978164
  • Title

    Surface-emitting GaInAsP/InP injection laser with short cavity length

  • Author

    Motegi, Yotaro ; Soda, H. ; Iga, Kenichi

  • Author_Institution
    Tokyo Institute of Technology, Yokohama, Japan
  • Volume
    18
  • Issue
    11
  • fYear
    1982
  • Firstpage
    461
  • Lastpage
    463
  • Abstract
    We have succeeded in making a surface-emitting GaInAsP/InP injection laser with short cavity length (¿ 10 ¿m) which operates at 1.22 ¿m of wavelength with threshold current of 160 mA (33 kA/cm2) at 77 K. No side-emitting mode was observed as a result of preparing long absorbing regions and a small dot electrode (25 ¿m ¿). One of the longitudinal modes, with a spacing of 170 Å, dominated above threshold and the far-field radiation angle was sharp (2¿¿ = 10°).
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; semiconductor junction lasers; 1.22 microns wavelength; GaInAsP-InP laser; far-field radiation angle; longitudinal modes; semiconductor laser; short cavity length; surface emitting injection laser; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820314
  • Filename
    4246449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978164