DocumentCode
978203
Title
Prediction of TDDB characteristics under constant current stresses [gate oxides]
Author
Cheung, T.-S. ; Choi, W.-Y. ; Lee, S.-D. ; Yoon, J.-S. ; Kim, B.-R.
Author_Institution
Dept. of Electron. Eng., Yonsei Univ., Seoul, South Korea
Volume
32
Issue
13
fYear
1996
fDate
6/20/1996 12:00:00 AM
Firstpage
1241
Lastpage
1242
Abstract
A new breakdown model for gate oxides under constant current stresses is proposed, which directly relates the oxide lifetime to the stress current density and includes the statistical nature of oxide breakdown using the effective oxide thickness. It is shown that this model can reliably predict the TDDB of oxides for any current stress levels and oxide areas
Keywords
MIS structures; current density; dielectric thin films; electric breakdown; statistical analysis; TDDB characteristics; breakdown model; constant current stresses; effective oxide thickness; gate oxides; oxide breakdown; oxide lifetime; stress current density; time-dependent dielectric breakdown;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960798
Filename
503028
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