Title :
CW room-temperature visible single quantum well Ga0.73Al0.27As diode lasers grown by metalorganic chemical vapour deposition
Author :
Burnham, R.D. ; Scifres, D.R. ; Streifer, W.
Author_Institution :
Xerox Palo Alto Research Centers, Palo Alto, USA
Abstract :
Room-temperature CW laser operation at 7125 Å has been achieved in a (Ga1¿xAlxAs, x¿0.27) single quantum well double heterostructure (SQW-DH) diode laser. The laser consists of a 9 ¿m-wide delineated shallow proton stripe. The pulsed threshold current for a 250 ¿m long device is 115 mA whereas the CW threshold current is 140 mA. The CW external differential quantum efficiency is 60%.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; vapour phase epitaxial growth; CW visible single quantum well Ga0.73Al0.27As diode laser; III-V semiconductor; differential quantum efficiency; metalorganic chemical vapour deposition; pulsed threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820345
