• DocumentCode
    978495
  • Title

    CW room-temperature visible single quantum well Ga0.73Al0.27As diode lasers grown by metalorganic chemical vapour deposition

  • Author

    Burnham, R.D. ; Scifres, D.R. ; Streifer, W.

  • Author_Institution
    Xerox Palo Alto Research Centers, Palo Alto, USA
  • Volume
    18
  • Issue
    12
  • fYear
    1982
  • Firstpage
    507
  • Lastpage
    509
  • Abstract
    Room-temperature CW laser operation at 7125 Å has been achieved in a (Ga1¿xAlxAs, x¿0.27) single quantum well double heterostructure (SQW-DH) diode laser. The laser consists of a 9 ¿m-wide delineated shallow proton stripe. The pulsed threshold current for a 250 ¿m long device is 115 mA whereas the CW threshold current is 140 mA. The CW external differential quantum efficiency is 60%.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; vapour phase epitaxial growth; CW visible single quantum well Ga0.73Al0.27As diode laser; III-V semiconductor; differential quantum efficiency; metalorganic chemical vapour deposition; pulsed threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820345
  • Filename
    4246481
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978495