Title :
Be-implanted p-n junctions in Ga0.47In0.53As
Author :
Vescan, L. ; Selders, J. ; Kr¿¿utle, H. ; K¿¿tt, W. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
The fabrication of Be-implanated Ga0.47In0.53As p-n diodes is described. After annealing the diodes exhibit saturation current densities of 1.5×10¿4 A/cm¿2 and an ideality factor of 1.6. The built-in voltage of ¿0.7 V demonstrates the feasibility of their application to electronic devices. SIMS and C/V measurements are consistent with theoretical data.
Keywords :
III-V semiconductors; beryllium; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor diodes; semiconductor doping; C/V measurements; Ga0.47In0.53As:Be p-n diodes; III-V semiconductor; SIMS measurements; annealing; ideality factor; saturation current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820361
