Title :
Planar self-aligned ion-implanted InP MOSFET
Author :
Cameron, D.C. ; Irving, L.D. ; Whitehouse, C.R. ; Woodward, J.
Author_Institution :
Royal Signals & Radar Establishment, Great Malvern, UK
Abstract :
n-channel enhancement-mode InP MOSFETs have been fabricated on Fe-doped semi-insulating material using a planar self-aligned Mo gate process with ion-implanted source and drain contact regions. These devices showed high mobilities up to 2400 cm2/Vs and excellent uniformity and stability.
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; ion implantation; Fe-doped semi-insulating material; III-V semiconductor; Mo gate process; planar self-aligned ion-implanted InP MOSFET; stability; uniformity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820362
