• DocumentCode
    978772
  • Title

    Lateral grating array high power CW visible semiconductor laser

  • Author

    Scifres, D.R. ; Burnham, R.D. ; Streifer, W.

  • Author_Institution
    Xerox Palo Alto Research Centers, Palo Alto, USA
  • Volume
    18
  • Issue
    13
  • fYear
    1982
  • Firstpage
    549
  • Lastpage
    550
  • Abstract
    A periodic, grating-like array of substrate grooves oriented parallel to the longitudinal axis of the laser provides a small periodic lateral thickness modulation of the active region of an MO-CVD-grown Ga1¿xAlxAs laser producing phase-locked operation at 7680 Å. CW output powers as high as 138 mW/facet have been obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; CW output powers; Ga1-xAlxAs laser; III-V semiconductors; active region; grating-like array; periodic lateral thickness modulation; phase-locked operation; substrate grooves;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820372
  • Filename
    4246509
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978772