Title :
Low threshold room temperature continuous wave operation of 1.3 μm GaInAsP/InP strained layer multiquantum well surface emitting laser
Author :
Uchiyama, S. ; Yokouchi, N. ; Ninomiya, T.
Author_Institution :
Optoelectron. Furukawa Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
5/23/1996 12:00:00 AM
Abstract :
A 1.3 μm GaInAsP/InP strained-layer multiquantum well surface-emitting (SE) laser has been demonstrated. Room temperature continuous wave (CW) operation is obtained. The threshold current is 4.7 mA, which is a record low value for a 1.3 μm SE laser, at 20°C. The highest CW operating temperature of 22°C for a 1.3 μm SE laser is also achieved
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; quantum well lasers; surface emitting lasers; μm SE laser; 1.3 mum; 20 C; 22 C; 4.7 mA; CW operating temperature; GaInAsP-InP; GaInAsP/InP strained layer multiquantum well surface emitting laser; low threshold room temperature continuous wave operation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960676
