• DocumentCode
    978911
  • Title

    Measurement of J/V characteristics of a GaAs submicron n+-n¿-n+ diode

  • Author

    Hollis, Mark A. ; Eastman, L.F. ; Wood, C.E.C.

  • Author_Institution
    Cornell University, School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Ithaca, USA
  • Volume
    18
  • Issue
    13
  • fYear
    1982
  • Firstpage
    570
  • Lastpage
    572
  • Abstract
    The J/V characteristics of a GaAs 0.24 ¿m channel length n+-n¿-n+ diode have been measured at 8 K, 77 K and 300 K. Good agreement is observed with the J/V predictions recently reported by Awano et al. using a Monte-Carlo simulation of a similar device. This verifies the accuracy of their model, and substantiates their findings that electron transport in a 0.25 ¿m channel is near-ballistic at 77 K, with a peak ensemble-average electron velocity approaching 108 cm s¿1 for an ensemble-average energy just under 0.36 eV. An effective time-average velocity of about half this value can be expected for the total channel transit.
  • Keywords
    III-V semiconductors; carrier mobility; gallium arsenide; semiconductor diodes; GaAs submicron n+-n--n+ diode; III-V semiconductors; J/V characteristics; electron transport; near-ballistic transport; peak ensemble-average electron velocity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820386
  • Filename
    4246523
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=978911