Title :
Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor
Author :
Van de Casteele, J. ; Vilcot, J.P. ; Gouy, J.P. ; Mollot, F. ; Decoster, D.
Author_Institution :
Inst. d´Electron. et de Microelectron. du Nord, CNRS, Villeneuve d´Ascq
fDate :
5/23/1996 12:00:00 AM
Abstract :
Gain nonlinearities at low optical power of an edge coupled GaInAs/InP heterojunction bipolar phototransistor are used to mix the optical demodulation products of two (or more) laser beams. One beam could be CW or low frequency range modulated, since the other one is RF or microwave modulated. Experiments carried out for 2 GHz and 2 kHz, respectively, show the mixing of the two demodulated electrical signals in the phototransistor
Keywords :
III-V semiconductors; demodulation; electro-optical modulation; gallium arsenide; heterojunction bipolar transistors; indium compounds; laser beams; multiwave mixing; phototransistors; 2 GHz; 2 kHz; GaInAs-InP; RF modulated; demodulated electrical signals; edge coupled GaInAs/InP heterojunction bipolar phototransistor; edge-coupled GaInAs/InP heterojunction phototransistor; electro-optical mixing; gain nonlinearities; laser beams; low frequency range modulated; low optical power; microwave modulated; optical demodulation product mixing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960636
