• DocumentCode
    979030
  • Title

    Light emitting real-space transfer devices fabricated with strained GaAs/In0.2Ga0.8As/AlGaAs heterostructures

  • Author

    Lai, J.-T. ; Yeh, Yung-Hui ; Lee, Jonathan Y.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
  • Volume
    32
  • Issue
    11
  • fYear
    1996
  • fDate
    5/23/1996 12:00:00 AM
  • Firstpage
    1041
  • Lastpage
    1042
  • Abstract
    Light emitting devices based on real-space electron transfer are implemented with strained GaAs/InGaAs/AlGaAs heterostructures on GaAs substrates. Both GaAs channel and In0.2Ga0.8As channel devices are fabricated. The device energy band diagrams are simulated by using the MEDICI program. The optical measurement shows that the photocurrent on/off ratio of InGaAs channel devices is better than that of GaAs channel devices
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting devices; semiconductor heterojunctions; GaAs channel devices; GaAs substrates; GaAs-In0.2Ga0.8As-AlGaAs; InGaAs channel devices; MEDICI program; energy band diagrams; fabrication; light emitting devices; optical measurement; photocurrent on/off ratio; real-space transfer devices; simulation; strained GaAs/InGaAs/AlGaAs heterostructures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960664
  • Filename
    503107
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979030