• DocumentCode
    979113
  • Title

    Measurement of radiative and auger recombination rates in p-type InGaAsP diode lasers

  • Author

    Su, C.B. ; Schlafer, J. ; Manning, J. ; Olshansky, R.

  • Author_Institution
    GTE Laboratories Incorporated, Waltham, USA
  • Volume
    18
  • Issue
    14
  • fYear
    1982
  • Firstpage
    595
  • Lastpage
    596
  • Abstract
    Carrier lifetimes and spontaneous emission rates are reported for InGaAsP diode lasers. For active layers Zn-doped in the range 1¿2 × 1018/cm3 the radiative recombination constant B is 0.8 × 10¿10 cm3/s and the nonradiative constant C is 0.9 × 10¿28 cm6/s for a Cnp2 Auger process. For lightly doped lasers the Auger model alone cannot explain the data.
  • Keywords
    Auger effect; III-V semiconductors; carrier lifetime; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; Auger recombination rates; Zn-doped; carrier lifetime; p-type InGaAsP diode lasers; radiative recombination rates; semiconductor laser; spontaneous emission rates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820408
  • Filename
    4246546
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979113