Title :
Impact of strain-temperature stress on ultrathin oxide
Author :
Tung, Chia-Wei ; Yang, Yi-Lin ; Hwu, Jenn-Gwo
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
fDate :
7/1/2006 12:00:00 AM
Abstract :
The effects of strain-temperature stress on the interfacial characteristics of ultrathin SiO2 films on Si substrates were investigated in this brief. Both tensile and compressive strains were respectively applied on films at evaporated temperature. Quality improvement could be observed in the tensile one but degradation in another
Keywords :
dielectric thin films; electric breakdown; silicon; silicon compounds; stress effects; thermal stresses; SiO2; compressive strain; interfacial characteristics; strain-temperature stress; stress effects; tensile strain; ultrathin oxide; ultrathin silicon dioxide films; Capacitive sensors; Compressive stress; Dielectric substrates; MOSFETs; Temperature measurement; Tensile strain; Tensile stress; Thermal stresses; Thickness control; Transistors; Compressive; strain–temperature stress; tensile;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.876273
