• DocumentCode
    979351
  • Title

    Impact of strain-temperature stress on ultrathin oxide

  • Author

    Tung, Chia-Wei ; Yang, Yi-Lin ; Hwu, Jenn-Gwo

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
  • Volume
    53
  • Issue
    7
  • fYear
    2006
  • fDate
    7/1/2006 12:00:00 AM
  • Firstpage
    1736
  • Lastpage
    1737
  • Abstract
    The effects of strain-temperature stress on the interfacial characteristics of ultrathin SiO2 films on Si substrates were investigated in this brief. Both tensile and compressive strains were respectively applied on films at evaporated temperature. Quality improvement could be observed in the tensile one but degradation in another
  • Keywords
    dielectric thin films; electric breakdown; silicon; silicon compounds; stress effects; thermal stresses; SiO2; compressive strain; interfacial characteristics; strain-temperature stress; stress effects; tensile strain; ultrathin oxide; ultrathin silicon dioxide films; Capacitive sensors; Compressive stress; Dielectric substrates; MOSFETs; Temperature measurement; Tensile strain; Tensile stress; Thermal stresses; Thickness control; Transistors; Compressive; strain–temperature stress; tensile;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2006.876273
  • Filename
    1643510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979351