Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technology

Author

Tadikonda, Ramakrishna ; Hardikar, Shyam ; Green, David W. ; Sweet, Mark ; Narayanan, E. M Sankara

Author_Institution

Emerging Technol. Res. Centre, De Montfort Univ., Leicester

Volume

53

Issue

7

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

1740

Lastpage

1744

Abstract

This brief demonstrates the measured and simulated performance of a high-voltage junction-isolated lateral insulated-gate bipolar transistor (LIGBT) with a variation in lateral doping (VLD) drift region. Both experimental and simulation results show that significant advancements in breakdown voltages (BVs) and latch-up current densities can be obtained using this technology without compromising the forward voltage drop. The results validate that a VLD drift region can achieve the required BV with smaller drift region lengths, in comparison to conventional LIGBTs using uniform drift region technology, and that the VLD drift region technology enhances the safe operating area

Keywords

current density; insulated gate bipolar transistors; isolation technology; semiconductor device breakdown; semiconductor doping; semiconductor junctions; LIGBT; VLD drift region technology; breakdown voltages; drift region lengths; junction isolation technology; latch-up current densities; lateral IGBT; lateral doping drift region; lateral insulated-gate bipolar transistor; variation in lateral doping; Breakdown voltage; Current density; Insulated gate bipolar transistors; Insulation; Isolation technology; Nonuniform electric fields; Power integrated circuits; Power semiconductor devices; Semiconductor device doping; Voltage control; Lateral insulated-gate bipolar transistor (LIGBT); power semiconductor devices; variation in lateral doping (VLD);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.876276

Filename

1643512