DocumentCode
979433
Title
Ga1¿xAlxAs material for high-sensitivity pressure sensors
Author
Saxena, Alok Kumar
Author_Institution
University of Roorkee, Department of Electronics & Communication Engineering, Roorkee, India
Volume
18
Issue
15
fYear
1982
Firstpage
644
Lastpage
645
Abstract
The resistivity of n-type Ga1¿xAlxAs alloys has been found to be very sensitive to both the purely hydrostatic and small nonhydrostatic pressures. For some alloy compositions, the resistivity variation with pressure is almost linear. For typical alloy composition x = 0.23, the coefficients are ~ 1.7 kbar¿1 and ~ ¿0.15 kbar¿1 for low (P ¿ 18 kbars) and high pressures (P > 18 kbars), respectively. For the same composition, the temperature coefficients of resistivity are ~ 4.3 × 10¿3 K¿1 and ~ 0.22 K¿1 for temperature intervals 300 > T > 125 K and T < 125 K, respectively.
Keywords
III-V semiconductors; aluminium compounds; electric sensing devices; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; pressure transducers; high-sensitivity pressure sensors; n-type Ga1-xAlxAs alloys; resistivity; semiconductor; temperature coefficients of resistivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820439
Filename
4246578
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