• DocumentCode
    979488
  • Title

    Characteristics of anodic native oxide MIS diodes of In0.53Ga0.47As

  • Author

    Shirafuji, J. ; Amano, M. ; Inoue, M. ; Inuishi, Y.

  • Author_Institution
    Osaka University, Department of Electrical Engineering, Faculty of Engineering, Suita, Japan
  • Volume
    18
  • Issue
    15
  • fYear
    1982
  • Firstpage
    653
  • Lastpage
    654
  • Abstract
    Anodic native oxide has been formed on In0.53Ga0.47As layers lattice-matched to InP substrate. Auger analysis of the oxide layers and capacitance/voltage characteristic measurements of MIS diodes are carried out. A U-shaped distribution of the density of surface states, the minimum of which is located at Ec-0.15 eV and is about 2.2 × 1012 cm¿2eV¿1, is observed.
  • Keywords
    III-V semiconductors; electronic density of states; gallium arsenide; indium compounds; interface electron states; metal-insulator-semiconductor devices; semiconductor diodes; Auger analysis; In0.53Ga0.47As; InP substrate; MIS diodes; U-shaped distribution; anodic native oxide; capacitance/voltage characteristic; density of surface states; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820445
  • Filename
    4246584
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=979488