Title :
InGaAsP/InP Schottky collector phototransistor
Author :
Naitoh, Masataka ; Sakai, Shin´ichi ; Umeno, Masayoshi
Author_Institution :
Nagoya Institute of Technology, Department of Engineering Science, Nagoya, Japan
Abstract :
The letter describes the first successful InGaAsP/InP transistor with an n-InP emitter, a p-In0.73Ga0.27As0.63P0.37 base and an Au Schottky collector. The device exhibited an optical gain in excess of 100 and an optical switching characteristic. The fabrication procedure is presented in the letter.
Keywords :
III-V semiconductors; Schottky effect; gallium arsenide; indium compounds; phototransistors; Au Schottky collector; InGaAsP-InP phototransistor; fabrication procedure; n-InP emitter; optical gain; optical switching characteristic; p-In0.73Ga0.27As0.63P 0.37 base;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820447
