DocumentCode
979513
Title
Very low noise all-niobium DC SQUIDs
Author
de Waal, V.J. ; van den Hamer, P. ; Mooij, J.E. ; Klapwijk, T.M.
Author_Institution
Laboratorium voor Technische Natuurkunde, Delft, The Netherlands
Volume
17
Issue
1
fYear
1981
fDate
1/1/1981 12:00:00 AM
Firstpage
858
Lastpage
860
Abstract
All-niobium thin film planar DC SQUIDs have been fabricated, containing submicron tunnel junctions. The fabrication method using photoresist techniques is briefly described. The Ic R product of the SQUIDs is 0.3 mV, the inductance 1 nH. They show no changes after repeated thermal cycling or storage over extended periods. The best intrinsic energy resolution obtained so far in a flux-locked loop configuration is 4 . 10-32J/Hz. The noise power is an order of magnitude higher than predicted from the simple RSJ model calculation.
Keywords
Josephson device noise; Chromium; Energy resolution; Fabrication; Inductance; Niobium; Resists; SQUIDs; Semiconductor films; Silicon; Substrates;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1981.1061049
Filename
1061049
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