• DocumentCode
    980089
  • Title

    GaAlAs-GaAs ballistic hetero-junction bipolar transistor

  • Author

    Ankri, D. ; Eastman, L.F.

  • Author_Institution
    Cornell University, School of Electrical Engineering, Ithaca, USA
  • Volume
    18
  • Issue
    17
  • fYear
    1982
  • Firstpage
    750
  • Lastpage
    751
  • Abstract
    A novel heterojunction bipolar transistor structure is proposed using the ballistic electron motion concept. Electrons which surmount the conduction band spike barrier (<¿E¿¿L) are accelerated into the base at higher velocities than the diffusion velocity. Calculations derived from a drift-diffusion emission model illustrate the trade-off possible between the injection efficiency and the electron velocity through the base.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; semiconductor device models; GaAlAs-GaAs bipolar transistor; ballistic electron motion; base; conduction band spike barrier; drift-diffusion emission model; electron velocity; heterojunction bipolar transistor; injection efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820508
  • Filename
    4246768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980089