• DocumentCode
    980123
  • Title

    Low-resistance ohmic contacts to p-InP

  • Author

    Cheng, C.L. ; Coldren, Larry A. ; Miller, B.I. ; Rentschler, J.A. ; Shen, C.C.

  • Author_Institution
    Bell Laboratories, Holmdel, USA
  • Volume
    18
  • Issue
    17
  • fYear
    1982
  • Firstpage
    755
  • Lastpage
    756
  • Abstract
    A new method for making low-resistance ohmic contacts to p-InP is described. Using layer-by-layer evaporated Au-Zn (25 wt% net Zn)/Cr/Au metallisation, specific contact resistance as low as 4.5 × 10¿5 ¿cm2 was obtained for p-InP with carrier concentration 2 × 1018 cm¿3. The effects of annealing temperature and time on the contact resistances were investigated.
  • Keywords
    III-V semiconductors; contact resistance; indium compounds; metallisation; ohmic contacts; semiconductor-metal boundaries; Au-Zn-Cr-Au metallisation; annealing temperature effects; carrier concentration; contact resistance; low-resistance ohmic contacts; p-InP; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820511
  • Filename
    4246771
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980123