Title :
A novel wideband MMIC voltage controlled attenuator with a bandpass filter topology
Author :
Daoud, Scarlet M. ; Shastry, Prasad N.
Author_Institution :
US Monolithics, Chandler, AZ
fDate :
6/1/2006 12:00:00 AM
Abstract :
The theory, analysis, and systematic design guidelines for a novel wideband monolithic bandpass pi-network voltage controlled attenuator (VCA) are presented. A 24-32-GHz VCA was designed and manufactured using 0.15-mum GaAs pseudomorphic high electron-mobility transistor (pHEMT) technology. This is the first reported VCA to use a bandpass filter topology to achieve the required operating frequency band and eliminate the effects of parasitic capacitances of the pHEMTs. The bandpass filter absorbs the parasitic capacitances and thereby eliminates their detrimental effects. The measured attenuation dynamic range is 12 dB plusmn 0.5 dB with minimum insertion loss of 2-3 dB. The input power handling capability is up to 0 dBm. The VCA is well matched and may be placed in a 50-Omega system
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC; attenuators; band-pass filters; gallium arsenide; microwave filters; 2 to 3 dB; 24 to 32 GHz; GaAs; bandpass filter; monolithic microwave integrated circuits; parasitic capacitances; pseudomorphic high electron-mobility transistors; voltage controlled attenuator; Attenuators; Band pass filters; Control systems; Guidelines; MMICs; PHEMTs; Parasitic capacitance; Topology; Voltage control; Wideband; Attenuator; bandpass filter; monolithic attenuator; voltage controlled attenuator (VCA);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2006.872920