Title :
Behavior of a traveling-wave amplifier versus temperature in SOI technology
Author :
Moussa, Mehdi Si ; Pavageau, Christophe ; Simon, Pascal ; Danneville, Francois ; Russat, Jean ; Fel, Nicolas ; Raskin, Jean-Pierre ; Vanhoenacker-Janvier, Danielle
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve
fDate :
6/1/2006 12:00:00 AM
Abstract :
In this paper, the design and measurement results of a CMOS partially depleted silicon-on-insulator (SOI) traveling-wave amplifier (TWA) are presented. The four-stage TWA is designed with a single common source nMOSFET in each stage using a 130-nm SOI CMOS technology requiring a chip area of 0.75 mm2. A gain of 4.5 dB and a unity-gain bandwidth of 30 GHz are measured at 1.4-V supply voltage for a power consumption of 66 mW. The designed circuit has been characterized over a temperature range from 25 degC to 300 degC. The performance degradation on the gain of the TWA, the SOI transistors, as well as the microstrip lines used for the matching network are analyzed. Thanks to the introduction of a dynamic threshold-voltage MOSFET, a greater gain-bandwidth product under lower bias conditions is demonstrated
Keywords :
CMOS integrated circuits; MOSFET; microstrip lines; silicon-on-insulator; travelling wave amplifiers; 1.4 V; 130 nm; 25 to 300 C; 30 GHz; 4.5 dB; 66 mW; SOI CMOS technology; SOI technology; SOI transistors; dynamic threshold-voltage MOSFET; four-stage TWA; matching network; microstrip lines; nMOSFET; partially depleted silicon-on-insulator; power consumption; traveling-wave amplifier; unity-gain bandwidth; Bandwidth; CMOS technology; Energy consumption; Gain measurement; MOSFET circuits; Power measurement; Semiconductor device measurement; Silicon on insulator technology; Temperature; Voltage; Dynamic threshold voltage MOSFET (DTMOS); floating body (FB); high-temperature effect; microstrip lines; silicon-on-insulator (SOI); traveling-wave amplifier (TWA);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2006.872950
