Behavior of a traveling-wave amplifier versus temperature in SOI technology

Author

Moussa, Mehdi Si ; Pavageau, Christophe ; Simon, Pascal ; Danneville, Francois ; Russat, Jean ; Fel, Nicolas ; Raskin, Jean-Pierre ; Vanhoenacker-Janvier, Danielle

Author_Institution

Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve

Volume

54

Issue

6

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

2675

Lastpage

2683

Abstract

In this paper, the design and measurement results of a CMOS partially depleted silicon-on-insulator (SOI) traveling-wave amplifier (TWA) are presented. The four-stage TWA is designed with a single common source nMOSFET in each stage using a 130-nm SOI CMOS technology requiring a chip area of 0.75 mm². A gain of 4.5 dB and a unity-gain bandwidth of 30 GHz are measured at 1.4-V supply voltage for a power consumption of 66 mW. The designed circuit has been characterized over a temperature range from 25 degC to 300 degC. The performance degradation on the gain of the TWA, the SOI transistors, as well as the microstrip lines used for the matching network are analyzed. Thanks to the introduction of a dynamic threshold-voltage MOSFET, a greater gain-bandwidth product under lower bias conditions is demonstrated

Keywords

CMOS integrated circuits; MOSFET; microstrip lines; silicon-on-insulator; travelling wave amplifiers; 1.4 V; 130 nm; 25 to 300 C; 30 GHz; 4.5 dB; 66 mW; SOI CMOS technology; SOI technology; SOI transistors; dynamic threshold-voltage MOSFET; four-stage TWA; matching network; microstrip lines; nMOSFET; partially depleted silicon-on-insulator; power consumption; traveling-wave amplifier; unity-gain bandwidth; Bandwidth; CMOS technology; Energy consumption; Gain measurement; MOSFET circuits; Power measurement; Semiconductor device measurement; Silicon on insulator technology; Temperature; Voltage; Dynamic threshold voltage MOSFET (DTMOS); floating body (FB); high-temperature effect; microstrip lines; silicon-on-insulator (SOI); traveling-wave amplifier (TWA);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2006.872950

Filename

1643603