Title :
Influence of gate intervals on the behaviour of submicron dual-gate FETs
Author :
Allamando, E. ; Salmer, G. ; Bouhess, M. ; Constant, Eric
Author_Institution :
Université des Sciences et Techniques de Lille I, Centre Hyperfréquences et Semiconducteurs, Laboratoire associé au CNRS 287, Villeneuve d´Ascq, France
Abstract :
A simple, self-consistent model, taking into account the non-stationary electron dynamic effects, is used to study the behaviour of submicron dual-gate FETs. It shows that the conventional model, based on the connection of two field-effect transistors in cascade, is no longer valid when the intergate distances become smaller than 0.6 ¿m.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; semiconductor device models; GaAs; III-V semiconductor; gate intervals; nonstationary electron dynamic effects; self-consistent model; submicron dual-gate FETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820536
