Title :
Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation
Author :
Gnudi, Antonio ; Ventura, Davide ; Baccarani, Giorgio
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
fDate :
11/1/1993 12:00:00 AM
Abstract :
A spherical-harmonics expansion method is used to find an approximate numerical solution of the Boltzmann transport equation (BTE) in a 1-D semiconductor device including acoustic and optical phonon, ionized impurity, and impact ionization scattering as well as a system of nonparabolic bands fitting the experimental density of states up to 2.6 eV. The method is applied to the simulation of a 1-D BJT and to the computation of the collector current multiplication factor. A comparison with experimental data is presented
Keywords :
Boltzmann equation; bipolar transistors; electronic density of states; impact ionisation; impurity scattering; semiconductor device models; 1D semiconductor device; BJT; Boltzmann transport equation; acoustic phonon scattering; approximate numerical solution; collector current multiplication factor; density of states; impact ionization; impact ionization scattering; ionized impurity scattering; nonparabolic bands; optical phonon scattering; spherical harmonics expansion; Acoustic devices; Acoustic scattering; Boltzmann equation; Computational modeling; Impact ionization; Optical devices; Optical scattering; Phonons; Semiconductor devices; Semiconductor impurities;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
